With a positive voltage to the drain or source of an N channel JFET and a negative voltage to the gate, what is the internal resistance of the JFET?

The internal resistance of an N-channel JFET (Junction Field Effect Transistor) is considered high when there is a positive voltage applied to the drain or source and a negative voltage applied to the gate. This scenario indicates that the JFET is in the "cut-off" region, where the gate-source voltage (Vgs) is negative enough to create a depletion region that restricts current flow through the channel.

In this state, the channel is effectively pinched off, leading to minimal current flow from the drain to the source. Consequently, the JFET presents a high internal resistance because it acts as an open switch, preventing significant current. This high resistance is advantageous in applications where the control of current flow is necessary, as it allows for effective modulation of the output signal without drawing much input current.

The high resistance characteristic is integral to the operation of JFETs, as it allows them to function as voltage-controlled resistors, maintaining their performance across various operational scenarios when used correctly.