What is the effect of applying positive voltage to the P end and negative voltage to the N end of a germanium diode?

Applying positive voltage to the P end and negative voltage to the N end of a germanium diode creates a forward bias condition. In this scenario, the positive voltage at the P-type material increases the majority carriers (holes) in that region, while the negative voltage at the N-type material enhances the majority carriers (electrons) there. This creates a reduced potential barrier at the junction between the P and N materials, allowing charge carriers to move freely across the junction.

Consequently, this flow of charge carriers leads to current flow through the diode, showcasing its primary function. In semiconductor devices like diodes, proper biasing is crucial for their operation, and forward biasing is essential for allowing current to pass, while reverse biasing would prevent current from flowing. Understanding this principle is fundamental in applications involving diodes, such as rectification, signal modulation, and other electronic circuit designs.